3BSE004737R1 PU513V1 Real-Time Accelerator (RTA) board
- 15 Piece / Pieces per Month
- T/T
- 10 days
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Product Details
Brand Name: | ABB | Place of Origin: | Switzerland | Model Number: | 3BSE004737R1 PU513V1 |
Product Description
3BSE004737R1 PU513V1
3BSE004737R1 PU513V1
The IGCT is a new type of power semiconductor switching device (Integrated Gate Commutated Thyristor = Gate Commutated Thyristor + Gate Unit) developed for use in medium voltage inverters in giant power electronics packages. converter devices in terms of power, reliability, switching speed, efficiency, cost, weight and volume, bringing a new leap forward in power electronics packages. IGCT is a GTO chip integrated with an anti-parallel diode and a gate driver circuit, then connected to its gate driver in a low inductance way at the periphery, combining the advantages of the stable switching capability of the transistor and the low on-state loss of the thyristor in the The IGCT is characterised by high current, high blocking voltage, high switching frequency, high reliability, compact structure and low conduction loss, as well as low cost and high yield rate. IGCTs have been successfully used in medium voltage inverters for 11 years (until 2009) in power system grid installations (100 MVA) and medium power industrial drives (5 MW).
Power Electronic Device (Power Electronic Device), also known as power semiconductor devices, used for electrical energy conversion and electrical energy control circuit in the high-power (usually refers to the current for tens to thousands of amps, voltage for hundreds of volts or more) electronic devices. Can be divided into semi-controlled devices, full-controlled devices and uncontrollable devices, including thyristor for semi-controlled devices, withstand voltage and current capacity in all devices high; power diode for uncontrollable devices, simple structure and principle, reliable work; can also be divided into voltage-driven devices and current-driven devices, including GTO, GTR for current-driven devices, IGBT, power MOSFET for voltage driven devices.
Xiamen Xiongba Electronic Commerce Co. LTD
FROM:Mr. Wei
E-Mail:2322181769@qq.com
TEL/WeChat:15396237607
5SHX0445D0001
3BHL000462R0020
3BHL000181P0001
3BHL000495P0003
3BHL000259P0001
3BHL000382P0101
5SHY 3545L0006 IGCT MODULE
5SHX2645L0002 IGCT RC MODULE 91
IGCT MODULE 5SHY 3545L0009
5SHY 3545L0010 IGCT MODULE
5SHX 1960L0005, 91mm RC-IGCT
RC-IGCT 5SHX 1960L0006, 91MM GVC736
5SHX 0660F0002, 51MM RC-IGCT
5SHY 4045L0001 IGCT MODULE
5SHX 1060H0003, 68MM RC-IGCT
IGCT MODULE 5SHY 3545L0016, 4500V, 91MM
IGCT 4500V, 91MM, 5SHY 4045L0003
4500V, 91MM, 5SHY 4045L0004GVC736 IGCT
TRIC IGCT 5SHY5055L0002 5.5KV 91MM
IGCT 4500V, 91MM, 5SHY 3545L0014
IGCT MODULE 5SHY 3545L0014, 4500V, 91MM
IGCT REPLACEMENT TOOL IGCT
HL000181R0001 2 PCS IGCT
5SHX0445D0001 IGCT
5SHX0445D0001 IGCT
5SHX0360D0001 IGCT
5SHX0445D0001
PM851AK01 | 3BSE066485R1 |
PM856AK01 | 3BSE066490R1 |
PM858K01 | 3BSE082895R1 |
PM858K02 | 3BSE082896R1 |
PM860AK01 | 3BSE066495R1 |
PM862K01 | 3BSE076940R1 |
PM862K02 | 3BSE081636R1 |
PM866AK01 | 3BSE076939R1 |
PM866AK02 | 3BSE081637R1 |
PM891K01 | 3BSE053241R1 |
PM891K02 | 3BSE053242R1 |
SB822 | 3BSE018172R1 |
PM857K01 | 3BSE088385R1 |
PM857K02 | 3BSE088386R1 |
PM863K01 | 3BSE088381R1 |
PM863K02 | 3BSE088382R1 |
PM867K01 | 3BSE076355R1 |
PM867K02 | 3BSE081638R1 |
SM811K01 | 3BSE018173R1 |
SM812K01 | 3BSE072270R1 |
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